Характеристики
IGBT MODULE, 2X600V
Transistor Type IGBT Module
Transistor Polarity N Channel
Voltage, Vces 600V
Current Ic Continuous a Max 275A
Voltage, Vce Sat Max 1.9V
Case Style SEMiX 2s
Termination Type Screw
Collector-to-Emitter Breakdown Voltage 1V
Current Ic av 275A
Current, Icm Pulsed 400A
Current, Ifs Max 1000A
Time, Rise 80ns
Voltage, Vrrm 600V