IRG4IBC20WPBF, БТИЗ транзистор, 11.8 А, 2.16 В, 34 Вт

Характеристики

IRG4IBC20WPBF, БТИЗ транзистор, 11.8 А, 2.16 В, 34 Вт The IRG4IBC20WPBF is an Insulated Gate Bipolar Transistor designed expressly for switch-mode power supply and PFC (power factor correction) applications. The latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability. It features lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz (hard switched mode). Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300kHz).

• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% Reduction of Eoff parameter
• Low IGBT conduction losses
• Particular benefit to single-ended converters and boost PFC topologies 150W and higher

Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные