IRFZ34NSPBF, МОП-транзистор, N Канал, 29 А, 55 В, 40 мОм

Характеристики

IRFZ34NSPBF, МОП-транзистор, N Канал, 29 А, 55 В, 40 мОм The IRFZ34NSPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

• Advanced process technology
• Fast switching
• Fully avalanche rating
• Low static drain-to-source ON-resistance
• Dynamic dV/dt rating

Полупроводники — ДискретныеТранзисторыМОП-транзисторы