NGD18N40ACLBT4G, БТИЗ транзистор, 18 А, 1.8 В, 115 Вт

Характеристики

NGD18N40ACLBT4G, БТИЗ транзистор, 18 А, 1.8 В, 115 Вт The NGD18N40ACLBT4G is a 400V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for use in ignition, direct fuel injection or wherever high voltage and high current switching is required. The logic level IGBT features monolithic circuitry integrating ESD and overvoltage clamped protection for use in inductive coil drivers applications.

• Ideal for coil on plug applications
• Gate-emitter ESD protection
• Temperature compensated gate-collector voltage clamp limits stress applied to load
• Integrated ESD diode protection
• New design increases unclamped inductive switching (UIS) energy per area
• Low threshold voltage interfaces power loads to logic or microprocessor devices
• Low saturation voltage
• High pulsed current capability
• Emitter ballasting for short-circuit capability

Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные