RFD16N05LSM9A, МОП-транзистор, N Канал, 16 А, 50 В, 47 мОм

Характеристики

RFD16N05LSM9A, МОП-транзистор, N Канал, 16 А, 50 В, 47 мОм The RFD16N05LSM9A is a N-channel logic level Power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits give optimum utilization of silicon, resulting in outstanding performance. It is designed for use with logic level (5V) driving sources in applications such as programmable controllers, switching regulators, switching converters and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3 to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.

• UIS SOA rating curve (single pulse)
• Can be driven directly from CMOS, NMOS and TTL circuits
• SOA is power dissipation limited
• Nanosecond switching speeds
• Linear transfer characteristics
• High input impedance
• Majority carrier device

Полупроводники — ДискретныеТранзисторыМОП-транзисторы