Характеристики
IGBT MODULE, DUAL, 1200V
Transistor Type IGBT Module
Transistor Polarity N Channel
Voltage, Vces 1200V
Current Ic Continuous a Max 310A
Voltage, Vce Sat Max 2.15V
Case Style SEMITRANS 3
Termination Type Screw
Collector-to-Emitter Breakdown Voltage 1200V
Current Ic Continuous b Max 200A
Current Ic av 310A
Current, Icm Pulsed 400A
External Depth 61.4mm
Fixing Centres 93mm
Fixing Hole Diameter 5.4mm
SMD Marking SEMITRANS 3
Temperature, Current 25 C
Time, Rise 110ns
Transistors, No. of 2
Width, External 105mm
Voltage 1200V